Abstract
In this letter, a compact silicon carbide (SiC) power module featuring low stray inductance and balanced thermal resistance is proposed. To make full utilization of SiC devices in high-frequency and high-power-density applications, the laminated busbar and double-sided cooling heatsinks are directly packed as parts of the SiC power module. To balance the mechanical and thermal stress on the chips, a press-pack-like package technology is adopted. The electrical and thermal experiments of the prototype are evaluated to validate the design of low inductance and balanced thermal distribution.
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