Abstract
This work modelled and analysed perovskite solar cells based on Cs2AgBiBr6 with various electron transport layers and hole transport layers. The device structure is fluorine-doped tin oxide (FTO)/ZnO/Cs2AgBiBr6/NiO/Au. Power conversion efficiency (PCE) is practically saturated after the perovskite thickness of 700 nm. PCE declines from 21.88% to 1.58% when carrier lifetime decreases from 103 ns to 10−1 ns. Deep-level defects at mid-band gap energy of the perovskite layer can trap both carriers, allowing greater carrier recombination. Carrier capture cross-sectional area greatly impacts on cell performance. When subjected to high temperatures (T), the carrier mobility would diminish because carrier scattering increases cell resistance. That is why by raising T from 300 K to 400 K, the value of built-in potential (V bi) decreases from 1.17 V to 0.98 V. Device shows maximum efficiency when FTO is used as the front electrode, and Au is used as a back electrode. The optimum device, made of FTO/ZnO/Cs2AgBiBr6/NiO/Au, provides V oc = 1.29 V, J sc = 20.69 mA cm−2, fill factor = 81.72%, and PCE = 21.88%.
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