Design and Analysis of Simultaneous Wideband Input/Output Matching Technique for Ultra-Wideband Amplifier

To-Po Wang

doi:10.1109/access.2021.3068394

Abstract

A simultaneous wideband input/output matching technique for ultra-wideband (UWB) low-noise amplifier (LNA) is proposed in this paper. Feedback resistors leading the gate inductors combined with inductive dividers at output ports achieve an extended bandwidth and good input/output return loss. Moreover, Q-factor improved vertical solenoid inductors are used in the matching networks for high gain and low noise figure (NF). The proposed matching technique, not only enhances the bandwidth, but also achieves a high gain and a low NF for the fabricated 3.1-10.6-GHz monolithic 180-nm CMOS UWB amplifier. Operating at low supply voltage, the measured power consumption is 18.9 mW, the measured gain of the UWB LNA is 15.02 dB, and the NF is 3.1 dB. Moreover, the measured input/output reflection coefficients S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> and S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</sub> are lower than -9.4 dB and -15.8 dB, respectively, covering the full-band UWB frequencies. Compared to previously published full-band 3.1-10.6-GHz 180-nm CMOS UWB LNAs, the proposed LNA measurements demonstrate high gain, low NF, low supply voltage, low power dissipation, and good input/output reflection coefficients.

Highlights

The demand for radio frequency (RF) and high data rate communication systems has led to the use of higher frequencies and larger bandwidths [1]–[11].While the size of transistors continues to shrink, the supply voltage must be scaled down proportionally, due to the reliability of the gate oxide [5]
EXPERIMENTAL RESULTS The low-noise amplifier (LNA) was fabricated in a 180-nm CMOS process and the size of the fabricated chip is 0.945 × 0.82 mm2, excluding the testing pads
In [13]–[15], the adopted 1.5-V supply voltage is widely used for low-voltage low-power 180-nm CMOS circuits

Summary

Introduction

The demand for radio frequency (RF) and high data rate communication systems has led to the use of higher frequencies and larger bandwidths [1]–[11].While the size of transistors continues to shrink, the supply voltage must be scaled down proportionally, due to the reliability of the gate oxide [5].

Results

Conclusion