Design and Analysis of InP/InAs/AlGaAs Based Cylindrical Surrounding Double-Gate (CSDG) MOSFETs With La2O3 for 5-nm Technology

Pattunnarajam Paramasivam,Naveenbalaji Gowthaman,Viranjay M Srivastava

doi:10.1109/access.2021.3131094

Pattunnarajam Paramasivam, Naveenbalaji Gowthaman + Show 1 more

Open Access

https://doi.org/10.1109/access.2021.3131094

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Abstract

Design and Analysis of InP/InAs/AlGaAs Based Cylindrical Surrounding Double-Gate (CSDG) MOSFETs With La<sub>2</sub>O<sub>3</sub> for 5-nm Technology

Highlights

Over the last few decades, the Indium Phosphide (InP) and Aluminum Gallium Arsenide (AlGaAs) semiconductor materials have excellent electron transport characteristics, making them promising options for future nanoscale CMOS
The higher permittivity of high-kappa Lanthanum oxide material improvises the accessibility of nanoscale CMOS MOSFETs and regulates the charge carrier current based on oxide capacitance and gate leakage
RECOMMENDATIONS In this research work, the analog parameters required to build the structure of novel InP/InAs/AlGaAs High Electron Mobility Transistors (HEMTs) with a gate length of Lg = 5 nm were investigated

Summary

Introduction

Over the last few decades, the InP and AlGaAs semiconductor materials have excellent electron transport characteristics, making them promising options for future nanoscale CMOS. Indium Phosphide (InP) is a direct bandgap III-V compound semiconductor material with a short carrier time It is primarily employed for lasers, sensitive photo-detectors, and modulators at 1550 nm wavelength, which is widely used in media communications. Due to its operation with GHz frequency range and excellent intrinsic properties, InP-based transistors are widely used in highspeed applications Their applications include aerospace industries, high-speed fiber optics, and microwave communications [1, 2]. Recent High Electron Mobility Transistors (HEMTs) are made with compound semiconductor (AlInN/AlGaN/GaN) materials that are extensively utilized for high-speed applications operating in the Ka-band between 26.5 GHz - 40 GHz and in high power applications at the X-band frequencies between the 8 GHz to 12 GHz. The GaN is a semiconductor material with a wide band-gap (3.6 eV) similar to SiC and diamond, whose band-gap energy is 3.3 eV and 5.5 eV, respectively. The sheet charge density, high carrier density, and mobility were considered for high power operations of AlInN/GaN Heterostructure FETs [3]

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