Design and analysis of CMOS RF receiver front-end of LNA for wireless applications

Abstract

This article deals the design and analysis of CMOS RF receiver front-end with the optimization of single-stage and two-stage low noise amplifier (LNA) for wireless applications. The low noise, high gain and better linearity for 3–10 GHz ultra wideband (UWB) wireless applications realized in 45 nm CMOS technology. The novelty of a single-ended and cascaded CMOS LNA designs for multi-standard purposeful for reconfigurable applications. The proposed LNA espouse entire circuit simulations investigation of the results in the center frequency of 3.4GHz. The admirable power gain (S21) is 32.5 dB with high reverse isolation (S12) of<−43.2dB; the preferable noise figure (NF) obtained as 0.9 dB. The perfect matching of input-output impedance for stability has measured to significantly input-output reflection coefficients S11=−11.6dB,S22=−10.0dB respectively while consuming only 11.8 mW from a 1 V supply.