Abstract
Secondary ion mass spectrometry analysis of ultrashallow boron implants is typically performed using sub-keV O2+ primary ion beams, either at normal or oblique (with O2 leak) incidence bombardment. This article investigates the distortion of depth profiles which may be due to sputter rate changes near the surface or primary ion beam induced mixing/roughening under the primary ion bombardment conditions mentioned above.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.