Depth profiles, projected ranges, and secondary ion mass spectrometry relative sensitivity factors for more than 50 elements from hydrogen to uranium implanted into metals

Abstract

More than 50 elements from hydrogen to uranium were implanted into beryllium, aluminum, titanium, nickel, tungsten and gold at energies up to 0.6 MeV and at fluences from 3 × 10 13 to 5 × 10 15 cm -2 to create standards appropriate for depth profiling using secondary ion mass spectrometry (SIMS). SIMS depth profiling was performed for these combinations using b oth oxygen and cesium primary ions and positive and negative secondary ions respectively. SIMS relative sensitivity factors (RSFs) were determined from these data to allow quantification of impurity densities and depth profiles in these metals and possibly other metals through the use of systematics. Implantation ranges were determined from the experimental profiles, and are compared with the corresponding results of TRIM89/91 and Implant Sciences Profile Code calculations. The agreement between the two calculations and between both calculations and most of the experimental results is within 15% – 20%. The experimental error is about 15%. This work establishes a quantified SIMS methodology for measuring impurity densities and implantation depth profiles in metals.