Depth profiles obtained from simulation of GaAs bombarded with noble gas ions using MARLOWE

Abstract

Ion implantation is widely used in integrated circuit manufacturing, and is expected to continue well into the future. In addition, particle bombardment is used to tailor the properties of semiconductor materials and devices. A reliable description of as-implanted depth and vacancy profiles and resulting damage is needed for technological development. The binary collision approximation (BCA) methods are a time economical tool to predict these profiles. During this investigation the BCA code, MARLOWE, was used with a Ziegler, Biersack and Littmark (ZBL) interatomic potential and Firsov’s model for electronic stopping. For each ion investigated (He, Ne, Ar and Kr) the depth profile and vacancy distributions created by the bombardment were calculated at different energies. From these results it is clear that the mass and energy of the ion used to bombard GaAs strongly influences the depth profile and vacancy distribution.