Deposition of silicon-based dielectrics by remote plasma-enhanced chemical vapor deposition

Abstract

This paper discusses the deposition of thin films of silicon oxides, nitrides and oxynitrides by the relatively new technique of remote plasma-enhanced chemical vapor deposition, or RPECVD. This process uses a silane-based reaction chemistry that is qualitatively different from the direct PECVD techniques that are more commonly employed. In this paper, we discuss those aspects of the RPECVD deposition process gas-phase and surface chemistry that ensure the growth of stoichiometric, hydrogen-free films at relatively low substrate temperatures (100 to 300°C). In this context, we highlight the results of IR measurements that give direct information relative to stoichiometry and hydrogen atom incorporation. We consider the applications of these silicon-based dielectrics in II–VI device structures, and in particular focus on the importance of semiconductor surface preparation prior to film deposition. Finally, we also discuss the properties of these films in device structures utilizing crystalline Si, Ge and (In, Ga)As and then present the results of our initial studies of dielectric film deposition onto CdTe surfaces.