Abstract
This paper describes the application of remote plasma enhanced chemical vapor deposition (Remote PECVD) to the deposition of thin films of silicon oxide, silicon nitride and hydrogenated amorphous silicon. We compare the Remote PECVD process with Direct PECVD, and contrast the chemical bonding properties of silicon oxide and nitride films deposited by the Remote and Direct PECVD processes. We present an empirical model for the deposition process chemical reaction pathways that includes: (i) gas phase reactions involving either chemical consumption or selective fragmentation of the silane reactant, and/or (ii) surface reactions which determine the stoichiometry and hydrogen content of the deposited films.
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