Abstract
This paper describes the low-temperature deposition of thin films of silicon oxides, nitrides and oxynitrides by remote PECVD. The remote PECVD process differs from conventional and direct PECVD process in two ways: (a) only a subset of the process reactants and/or diluents are directly plasma excited; and (b) thin film deposition takes place on a substrate that is outside of the plasma glow region. In order to: (a) restrict the multiplicity of reaction pathways, (b) control oxide and nitride stoichiometry; and (c) minimize bonded hydrogen incorporation, the silane reactant is never directly plasma excited. In the context of the remote PECVD process, we discuss: (a) multichamber systems with in-situ process diagnostics and in-situ surface analysis; (b) different deposition protocols; (c) reaction pathways; (d) process gas-substrate reactions; (e) chemical-bonding, and the optical and vibrational properties of the deposited thin films; (e) differences between remote PECVD and thermally grown silicon oxides; and (f) remote PECVD dielectrics in device structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
