Abstract
电阻式存储器由于具有众多的优点有望成为最有前景的下一代高速非挥发性存储器的选择之一. 实验利用射频磁控溅射法在重掺硅上沉积了Bi 2 O 3 薄膜, 并对该薄膜的结晶状态和Au/Bi 2 O 3 /n + Si/Al结构的电阻开关特性进行了研究. XRD分析结果表明, 射频磁控溅射法沉积所得的Bi 2 O 3 薄膜结晶性能好, (201)取向明显. I-V曲线测试结果表明, Au/Bi 2 O 3 /n + Si/Al结构具有单极性电阻开关特性. 通过对不同厚度Bi 2 O 3 薄膜的Au/Bi 2 O 3 /n + Si/Al结构I-V特性比较发现, 随着薄膜厚度的增加, 电阻开关的Forming、Set和Reset阈值电压均随之增加. 对于Bi 2 O 3 薄膜厚度为31.2 nm的Au/Bi 2 O 3 /n + Si/Al结构, 其Forming、Set和Reset阈值电压均低于4 V, 符合存储器低电压工作的要求.
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