Abstract
Effects of migration-enhanced-epitaxy-grown AlN (MEE-AlN) on polarities of GaN were investigated in low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). AlN was grown on extensively nitrided sapphire substrate by alternatively supplying trimethyl-aluminium (TMA) and ammonia with 2-second purging in between. It was found that the polarities of GaN depend on the growth temperatures of MEE-AlN. With increase of the growth temperature of the MEE-AlN layer, the Ga-polar ratio in GaN epilayer decreased. At the same growth temperature of MEE-AlN, the formation of Ga-polarity could be promoted by prolonging the TMA pre-flow time in the first cycle of MEE-AlN growth. The experimental results well reveal the kinetic selection process of GaN polarity in the MOVPE growth.
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