Dependence of three-dimensional bottleneck barrier height minimum on threshold voltage fluctuated by ion implantation of source and drain extensions in silicon-on-insulator triple-gate fin-type field-effect transistors

Abstract

We have investigated the threshold voltage (Vth) fluctuated by ion implantation (I/I) of the source and drain extensions for a leading-edge variability-tolerant device structure using a three-dimensional (3D) process and device simulations. We have previously reported that the fluctuated Vth is characterized by the variation of the minimum value of the 3D bottleneck barrier height (BBH3D,min) of electrostatic potential from the source contact to the corresponding bottleneck points in the entire device. Standardized multiple regression analysis indicated that the 3D position where BBH3D,min exists (BBP3D,min) has only a weak correlation with the Vth. The effect of the BBP3D,min on the Vth is not significantly large; therefore, the Vth can almost be explained by only the value of BBH3D,min over the entire Vth region, despite the drain bias condition.