Abstract
Coordinated investigations of cathodoluminescence spectra, microstructure, specific resistance and presence of oxygen in Cd 12x Zn x Te crystals are used to identify how the electrical properties and degree of perfection of the crystal lattice of these materials are affected by the form in which oxygen is present as an intrinsic point defect. It is found that oxygen, which is the main background impurity in Cd12xZnxTe, forms different types of point defects at different positions in the lattice, depending on the ratio @Cd#/@Zn#. The optimum composition for making detectors of ionizing radiation, for which the crystal resistance is highest, is Cd0.77Zn0.23Te. © 1999 American Institute of Physics.@S1063-7826~99!00905-9#
Published Version
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