Abstract
Point defects and their concentrations play an important role in limiting the electrical and spectral properties of crystals. It is observed that the crystal-growth process causes the generation of different types of point defects, and these defects create non-uniformities that can be detrimental to device performance. In this research Cd1-xZnxTe1-ySey (CZTS) crystals grown by Bridgman and Travelling heater methods are studied for their point defects. The focus is on the types of defects, their concentrations and the variations with the selected growth method. In addition the effects of growth-related medium and deep energy traps and their corresponding densities are related to the resistivity, life-time of charge carriers and -product for electrons.
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