Dependence of the defect mode with temperature, pressure and angle of incidence in a 1D semiconductor-superconductor photonic crystal

Abstract

In this study, using the two-fluid model and the transfer matrix method, we studied the effects of temperature, hydrostatic pressure, and angle of incidence on the defect mode in a one-dimensional photonic crystal composed of alternating layers of a semiconductor and a superconductor with a high critical temperature. We consider that the photonic crystal contains a defective layer of a superconducting material. The analysis of the transmittance spectra of the defect modes evidences a shift to short frequencies by increasing the temperature and keeping the pressure and the layer thickness of the materials fixed. However, we find a shift of the defect mode toward regions of high frequencies, when the hydrostatic pressure increases, keeping both the temperature and the layer thickness of the superconducting materials constant. By increasing the angle of incidence, while keeping the temperature, pressure, and layer thickness of the materials constant, the defect mode is shifted at high frequencies. In addition, we found that the number of defective modes within the photonic band gap increases as the thickness of the defective superconducting layer also increases. We hope that this work can be considered for the development of new optical devices.