Abstract
Selective anodization characteristics of p+-type Si were studied for substrates with 3 different orientations: (100), (110) and (111). Temporal evolution profiles of the etching front of periodic porosity modulated anodization were visualized by SEM and revealed the influence of anisotropy. The shape of Si fine structures formed by selective etching using circular mask patterns was strongly affected by etching anisotropy. Fine structures formed on (100) and (111) substrates possessed tips with structures reflecting the crystallographic symmetry of each wafer. The aspect ratio of tips formed on the (111) substrate was higher than those formed on the (100) substrate. The origin of the higher aspect ratio of tip formation is also attributed to etching anisotropy. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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