Abstract
The validity of the determination of the ionization coefficients deduced from the experimental measurement of photocurrent multiplication Mph in GaAlSb diodes, in which the electric-field profile is nonlinear and successive pure hole and pure electron injections cannot be made, are compared and discussed. Three methods for determining ionization coefficients kp and kn are discussed: (i) adjusting kp and kn in order to fit the experimentally observed Mph values using an approximated linear electric field; (ii) the same method applied to a more realistic electric-field profile; (iii) the Grant method in which kp and kn are calculated from the results of multiplication measurements in the case of pure injections and using this last electric-field profile. It is concluded that when the condition of pure injection is not fulfilled the Grant method may lead to erroneous k values and the adjustment method is more valid.
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