Abstract
The electron and hole impact ionization coefficients, α and β, respectively have been determined in InP using specially fabricated devices that permit both pure electron and pure hole injection. Ionization coefficients calculated from photocurrent multiplication data for devices with three different active region doping levels indicate a ratio of β/α which decreases from 4.0 to 1.3 for fields of 2.4 to 7.7 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> V/cm, respectively. Avalanche noise measurements have been performed on the same devices and the results indicate a value of β/α that is generally consistent with the photocurrent multiplication results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
