Abstract
In this paper we report the calculated results of the dark current and multiplication factor in MBE grown HgCdTe avalanche photodiodes with separate absorption and multiplication (SAM-APD). The device architecture used for this analysis comprises the following layers: p+ contact, p junction, n− multiplication, n charge sheet, n− absorber, and n+ contact. Various leakage current mechanisms are considered and the generation-recombination term is found to be the dominant one for this device structure. However, experimental reverse bias I-V characteristics reported earlier by T. de Lyon et al. shows a large deviation from ideality, which can not be explained in terms of bulk leakage current mechanism. To explain the large difference between experimental and theoretical data we consider that the dominant generation-recombination current is multiplied through impact ionization process. To validate this assumption, multiplication is calculated as a function of reverse bias. Electric field profile is obtained and the multiplication is computed using the ionization coefficients and avalanche gain equations. Breakdown voltage is found to be 85 V for room temperature operation in agreement with available data in the literature. The theoretical I-V curves considering multiplication are compared with the experimental ones and a close agreement is found which validate this model.
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