Dependence of Electrical Characteristics on Si Thickness and Ge Concentration for Unstrained Si Grown on Strained SiGe-on-Insulator n-Metal–Oxide–Semiconductor Field-Effect Transistor

Abstract

The dependencies of the electrical characteristics of n-metal–oxide–semiconductor field-effect transistors (n-MOSFETs) on the nano-scale Si thickness (<20 nm) and Ge concentration for unstrained Si grown on strained SiGe-on-insulator were investigated. As the Si thickness decreased, the electron mobility decreased more significantly than the strained Si n-MOSFET grown on relaxed SiGe-on-insulator (SGOI). In addition, the electron mobility decreased with increasing the Ge concentration, contrary to strained Si SGOI n-MOSFET.