Abstract
The fabrication and analysis of CMOS devices fabricated on Silicon-on-Glass (SiOG) and compared to SOI (SIMOX) substrates are presented. Key aspects of the low temperature (≪ 600 °C) fabrication process are described. The devices from the SiOG substrate were observed to be comparable to those fabricated on SOI (SIMOX) with respect to carrier mobility and off-state leakage current. SiOG is viewed as a platform with potential applications in advanced flat panel mobile display modules as well as low-cost, medium performance ASICs.
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