Abstract
Abstract Utilizing the TCAD-ATLAS platform, we performed accurate fitting of the electrical characteristics of GaN HEMT devices, achieving a fitting error of less than 5%. Building upon this parameter fitting, we introduced a stepped ohmic structure and compared it with the conventional rectangular structure. The findings highlight the significant impact of the ohmic structure on the off-state drain leakage current of the device. Through the implementation of the stepped ohmic structure, a remarkable reduction in the off-state leakage current was achieved. Specifically, the off-state leakage current decreased by three orders of magnitude, declining from 10−5 mA/mm to 10−8 mA/mm. Importantly, this improvement in leakage current was accomplished without adversely affecting the device’s output characteristics. These results underscore the effectiveness of the stepped ohmic structure in enhancing the overall performance of GaN HEMT devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
