Abstract
We report, for the first time, the successful fabrication of aluminum-free metamorphic (MM) InP/In/sub 0.53/ Ga/sub 0.47/ As/InP double heterojunction bipolar transistors (DHBTs) on GaAs substrates with a linearly graded In/sub x/Ga/sub 1-x/P buffer grown by solid-source molecular beam epitaxy (SSMBE). Devices with 5×5 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> emitters display a peak current gain of 40 and a common-emitter breakdown voltage (BV/sub CE0/) higher than 9 V, a current gain cut-off frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) of 48 GHz and a maximum oscillation frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) of 42 GHz. A minimum noise figure of 2.9 dB and associated gain of 19.5 dB were measured at a collector current level of 2.6 mA at 2 GHz. Detailed analysis suggests that the degradation of the base-emitter heterojunction interface and the increase of bulk recombination are the most probable causes for the poorer device performance of current metamorphic HBTs compared with lattice-matched HBTs.
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