Abstract
Amorphous indium gallium zinc oxide (α-InGaZnO) thin-film transistors using as nonvolatile memories (TFT-NVMs) with an Al2O3/TiAlO/Al2O3 charge trapping engineered structure have been demonstrated experimentally at low thermal budget of 300 °C. The high- k composite TiAlO layer with a high trap state density and a high dielectric constant was prepared by sputtering at room temperature as a charge trapping material. According to the high-resolution transmission electron microscopy analyses, the Al2O3/TiAlO/Al2O3 gate stack exhibited sharp interfaces and a uniform distribution of Ti and Al elements in the TiAlO film. The programming and retention characteristics of the fabricated α-InGaZnO TFT-NVMs were investigated in detail. The TFT-NVMs exhibited excellent programming characteristics with a large memory window of around 5.74 V under a 16 V programming voltage. It can also maintain a memory margin of about 5 V after 10 years, indicating only ∼15% charge loss. This paper suggests that α-InGaZnO TFT-NVMs using the high- k TiAlO composite material as the charge trapping material are promising for future nonvolatile memories applications in display technology, flexible and wearable electronics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
