Abstract
The concept of point defects in amorphous materials is now well established and they are known to influence electrical and optical properties in much the same way as they do in crystalline semiconductors. The dominant defect, however, is often different from that in the crystalline phase; for example, in amorphous silicon it is a dangling bond. In chalcogenide glasses charged defect pairs seem to predominate and these are characterized by a negative effective correlation energy. The electronic states associated with the defects are known to lie in the gap but attempts to position them precisely, either by experiment or by theoretical calculations, are not straightforward. The current situation will be described with reference to results on representative materials.
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