Abstract
We examine how the kinetic energy of localization associated with the site disorder influences the distribution of electronic states in amorphous semiconductors. Employing an elementary potential well model, in which the disorder characteristic of amorphous semiconductors is represented by an ensemble of potential wells, we evaluate the one-electron density of states function by first determining the binding energy corresponding to each well, and then averaging over the ensemble of wells. We find that the kinetic energy of localization plays an important role in determining both the shape and the magnitude of this one-electron density of states function.
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