Abstract
Inverted metamorphic (IMM) GaInP/GaAs/InGaAs rigid triple-junction solar cells under 1 MeV electron irradiation at various fluences were investigated theoretically. By fitting the electrical and optical parameters of solar cells with experimental results at the fluence ranging from 1 × 1014 e cm−2 to 1 × 1015 e cm−2, basic trap information was obtained, and then the minority carrier lifetime and trap concentration of sub-cells at various fluences were also calculated. The defects analysis of IMM triple-junction solar cell presented in this work could help understanding the radiation damage mechanism of 1 MeV electron irradiation.
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