Abstract
The performance of p-on-n triple junction solar cells (GaInPa/GaAs/Ge) has steadily improved. The highest cell efficiency measured to date is 27.0%, under 1 sun, AM0 illumination. The remaining power after 1E15 e/cm/sup 2/ 1 MeV electron irradiation is >82%. TECSTAR has also achieved very high performance n-on-p triple junction solar cells. The remaining power for n-on-p cells after 1E15 e/cm/sup 2/, 1 MeV electron irradiation is 85%. TECSTAR has also developed a bypass diode, grown monolithically during MOCVD growth of all the cell layers.
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