Abstract
In this paper we present the results of our investigations of deep levels in bulk Ga-doped Cd 0.95Mn 0.05Te mixed crystal by deep level transient spectroscopy (DLTS) method. Four electron traps have been found with activation energies obtained from Arrhenius plots equal to 0.26, 0.53, 0.55 and 0.83 eV. For the first and the second of the traps electron capture processes have been found to be thermally activated with energetic capture barriers equal 0.15 and 0.23 eV, respectively.
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