Abstract
AHA etch‐revealed features on {100} N+ wafers were compared to defects revealed by the well‐characterized A/B and molten etches on the same sample areas. It was demonstrated that the AHA etch technique reveals dislocation line segments, growth striae, and microdefects as does the A/B etch. Unlike the A/B etch the AHA etch did not result in a “memory” effect. A 1:1 correlation between molten dislocation etch pits and AHA‐revealed dislocation line segments was demonstrated.
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