Dislocation etch pits and growth of arsenic-antimony single crystals

Abstract

Single crystals of an arsenic-antimony solid solution have been grown at the minimum melting point (612‡C) composition (25.5 at.% arsenic) where the solidus and liquidus touch. Pyramidal etch pits produced on (111) cleavage faces mark the sites of emergence of dislocations; dislocation densities are low, ranging between 103 and 105 per cm2. The relationship between an unambiguous, right handed axial set and etch pit orientation on the (111) surface is established. The permissible Burgers vectors and dislocation reactions are detailed and are related to the observed etch pit types. In general, the results obtained also apply to the A7 structure elements themselves and amend previous findings of the crystallographic relationships between dislocation directions and etch pits.