Defect production in Si by ion bombardment under the influence of internal mechanical strain

Abstract

We report on investigations of radiation defects produced by H +-bombardment of Si crystals with internal mechanical strain. The misfit mechanical strain had been intentionally introduced by the preceding implantation with Ge + ions at doses up to 3 × 10 16 cm − 2 and annealing at 1050°C. The strain was measured by X-ray diffraction. Radiation defects generated by the subsequent H +-bombardment were studied by deep level transient spectroscopy. The internal Ge-related mechanical strain results in an apparent decrease of the defect concentration and in a broadening of the measured defect profiles. The behaviour of the radiation defects in the presence of a strain field is discussed in terms of an energy transfer from the elastic strain field to the radiation defects and in terms of motionally averaged states of the defects.