Abstract
The interactions between radiation defects and internal mechanical strain in ion-implanted semiconductor crystals have been investigated by means of Hall-effect measurements, deep-level transient spectroscopy (DLTS) and X-ray diffraction. The mechanical strain had been intentionally introduced into silicon crystals by 320 keV Ge-ion implantation (10 15−3 × 10 16 cm −2) and subsequent annealing. The samples were then subjected to H + - or Si +-ion bombardment for the introduction of radiation defects. Both Hall-effect and DLTS measurements showed a decrease of the defect production rate in a wide dose interval and accelerated annealing of the radiation defects in strained samples compared to unstrained reference samples. The reduction of the defect concentration during implantation and annealing under the influence of strain is supposed to be connected with an energy transfer from the elastic mechanical strain field to the defects.
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