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Abstract
Nickel foils were irradiated with 0.5-1.8 MeV 1H, 3He, 4He, 14N and 40Ar ions at liquid helium temperatures. During the irradiations, resistivity changes were measured to the total resistivity change of about 500 nΩ cm, where the saturation behavior of defect production could be observed. After the irradiations, annealing experiments were performed up to 300 K. From these measurements, the defect production cross sections, the spontaneous recombination volumes and the defect recovery spectra were obtained. The damage efficiency, the spontaneous recombination volume, and the total fraction and the structure of stage I recovery depended on the PKA energy.
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