Abstract
Nickel foils are irradiated at liquid helium temperatures with 84–120 MeV 12 C, 19 F, 28 Si, 35 C1, 81 Br and 127 I ions. During the irradiation, electrical resistivity changes are measured as a function of ion fluence. The defect production cross section and the recombination volume are determined from this measurement for each irradiation. The effect of electron excitation by ions on the defect production process is discussed.
Published Version
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