Abstract
Sputter yields of amorphous LiF caused by low-energy Ar +, Ar 2+, and K + impact have been computed using the binary collision simulation code Marlowe in conjunction with a simple, phenomenological model for defect production and diffusion. In the model used, the sputter yield is assumed to be made up by contributions due to (a) resonant or Auger neutralization (RN or AN), (b) vacancy formation due to momentum transfer, (c) inelastic energy loss channels other than RN or AN processes, and finally (d) direct sputtering of the constituents of the alkali halide solids. Our results are compared to recent investigations of the total sputter yield of Ar + bombarded LiF films.
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