Abstract
A 4He 2+ beam with energy of 3 MeV with the fluence of 1×10 17 ions/cm 2 was implanted at room temperature on (0 0 0 1) oriented 6H-SiC single crystal wafers. The damage induced by the ion implantation were investigated using cross-sectional transmission electron microscopy (XTEM). On the basis of the XTEM, cascade defects and helium bubbles were observed in the damaged layer around 7.5–7.8 μm from the sample surface. Diffraction pattern revealed that the damaged layer was crystalline silicon carbide (SiC). The implanted layer consisted of defective crystalline SiC.
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