Abstract
Silicon carbide (SiC) is a promising optical material for stable and broadband nanophotonics. To date, thin crystalline SiC layers for nanophotonic platforms have been created by ion implantation or growth on other materials, which may cause optical absorption in the SiC layer. We fabricated SiC nanobeam photonic crystal cavities directly from a crystalline (4H) SiC bulk wafer using oblique plasma etching to avoid material-based optical absorptions. The measured quality (Q) factor of the nanobeam photonic crystal cavity reaches 4 × 104, which is the highest recorded Q factor in crystalline SiC cavities. Furthermore, we investigated theoretical Q factors by taking into account structural imperfections unique to this fabrication process and compared them with the experimental results.
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