Abstract
A high dose of 1×1018 cm−2, 60 keV carbon ions was implanted into single crystalline 6H silicon carbide (SiC) at elevated temperatures. The formation of carbon phases in the crystalline SiC lattice was investigated by cross sectional transmission electron microscopy. An amorphous, carbon rich phase was produced at 300 °C. Precipitates of graphite were obtained at 600 °C, whereas at 900 °C small diamond grains were produced. These grains are in perfect epitaxial relation with the surrounding SiC lattice.
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