Abstract
Channeling measurements of solute atom positions were used to compare the concentrations of specific defect structures produced by ∼1 MeV He + and Kr + bombardment of Al. For both ion bombardments, the same major defect complexes were observed: in Al-0.1 at.% Ag crystals, AlAg 〈100〉 mixed dumbbells were created by the trapping of Al interstitials from 35–70 K; in Al-0.04 at.% Sn crystals, trivacancy-, tetravacancy-, and hexavacancy-Sn atom clusters were created by the trapping of vacancies from 180–220 K. From the rate of creation of AlAg mixed dumbbells during bombardment at 70 K (extrapolated to zero fluence), the production rate of free self-interstitials was determined directly, and was compared with the deposited nuclear energy distribution for the different ion bombardments. Similarly, the creation rates of the vacancy-Sn atom complexes were measured. The thermal stability and annihilation of the mixed dumbbells and vacancy complexes were also studied for the different ion bombardments.
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