Abstract
A submicron radio frequency (RF) fully depleted silicon on insulator (SOI) metal oxide semiconductor field-effect transistor (MOSFET) macromodel based on a complete extrinsic small-signal equivalent circuit and an improved computer-aided design model for the intrinsic device is presented. Because the intrinsic device model is charge based, our RF SOI MOSFET model can be used in both small- and large-signal analyses. The present analytical model is used for successfully designing microwave oscillators at 5.8 and 12 GHz in deep-submicron SOI complementary metal oxide semiconductor technology. © 2002 Wiley Periodicals, Inc. Int J RF and Microwave CAE 12, 428–438, 2002. Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mmce10045
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