Abstract
We fabricated high-efficiency thin-film CuIn 1− x Ga x Se 2-based solar cells from solution-based electroplated, auto-plated precursors and by physical vapor deposition. The devices were characterized by deep-level transient spectroscopy (DLTS). DLTS recorded a new electron trap level in addition to two hole (majority-carrier) trap levels and one electron (minority-carrier) trap level for low-efficiency devices. We believe that the additional electron trap level is an effective recombination center, which leads to the poor performance of the device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
