Abstract
Study of defects in a semiconducting material can help in improving the electrical and optical properties of a device based on such material. There is a general paucity of knowledge about the nature and origin of deep level defects in ternary and quaternary semiconductors in literature. It is, therefore, of interest to study defects in ternary semiconductor, InGaN-based, LEDs. By employing deep level transient spectroscopy (DLTS), at least nine defects, labeled, E1 ˗ E9 have been observed in InGaN-LEDs. Of these, seven defects E2 ˗ E8 have been characterized. Respective energy states induced by the defects within the band gap are found to be 0.61, 1.00, 1.24, 1.37, 1.46, 1.68, 2.25 eV and capture cross-sections, at infinite temperature, are 2.27×10 -17 , 4.39×10 -29 , 1.37×10 -20 , 9.58×10 -22 , 4.61×10 -28 , 2.19×10 -24 and 8.23×10 -22 cm 2 . Concentrations of the defects were estimated to be 4.6×10 4 , 2.7×10 4 , 19.2×10 4 , 6.9×10 4 , 6.9×10 4 , 5.9×10 4 and 6.3×10 4 (cm 3 ), respectively.
Highlights
Multi quantum wells (MQWs) in active layer of InGaN have played a pivoted role in the development of light emitting diodes (LEDs), laser diodes (LDs) and solar cells [1,2,3]
By employing deep level transient spectroscopy (DLTS), we report here nine deep levels in metal-organic chemical-vapor deposition (MOCVD)-grown InGaN PIN structure
Typical DLTS scans taken at 5 Hz and 100 Hz are shown in Figs. 2 and 3, respectively
Summary
Multi quantum wells (MQWs) in active layer of InGaN have played a pivoted role in the development of light emitting diodes (LEDs), laser diodes (LDs) and solar cells [1,2,3]. The way, electrons and holes recombine within active layer is of significant importance. They recombine either radiatively to emit photons or non radiatively causing unwanted heat and loss of input energy [3,4,5,6]. Deep energy states caused by defects are responsible for radiative and non radiative recombination; study of defects is of great importance to enhance the luminescent efficiency. Dyba et al [8] have detected two deep level traps in their metal-organic vapor-phase epitaxial (MOVPE)-grown GaN p-n junctions, while Tsarova et al [9] have observed four deep level defects in GaN-based laser structure grown by molecular-beam epitaxy (MBE). By employing DLTS, we report here nine deep levels in metal-organic chemical-vapor deposition (MOCVD)-grown InGaN PIN structure
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