Abstract
This study compares the optical characteristics of SiO2 thin films, grown by high temperature dry thermal oxidation of crystalline Si, or deposited by low-temperature remote plasma enhanced chemical vapor deposition (RPECVD), and subjected to rapid thermal annealing (RTA). Infrared (IR) spectrophotometry is used to determine the frequency of the Si-O-Si bond-stretching vibration for films of varying thickness, both before and after RTA. The thickness dependence of the stretching frequency as a function of distance from the SiO2/Si interface is determined from analysis of these measurements. The resulting profiles combined with a previous study of the index of refraction, n, for thermally grown SiO2 films is used to estimate the variation of n as a function of the distance from the SiO2/Si interface.
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