Year-end Sale % OFF 
Abstract
The effects of post-deposition thermal exposure, at temperatures typical of MOS fabrication processes, on gate oxides formed by remote plasma enhanced chemical vapor deposition (RPECVD) is discussed. SiO2 films were prepared by (1) thermal oxidation of silicon at temperatures from 700 to 1150° C, and (2) by RPECVD at a substrate temperature of 350° C. Post deposition thermal processing was achieved by rapid thermal annealing for 100 sec from 850–1200° C. Film properties were studied by infrared spectroscopy (IR), ellipsometry, and by measurements of stress, capacitance voltage characteristics, and dielectric breakdown. Post-formation, thermal processing in the range of 850–1200° C was shown to modify both thermally grown and deposited oxides, but it has been shown that RPECVD films could be stabilized against post-deposition changes by rapid thermal annealing at temperatures of about 900° C for periods of at least 100 sec.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
