Abstract
Atomic mixing in solids caused by low energy inert gas ion bombardment is modelled by a diffusion equation. The broadening and shift of peaks observed in SIMS depth profiles due to mixing is deconvoluted by using Laplace transforms. This enables the original impurity distribution of dilute Ti and Mo markers in silicon to be recovered from experimental SIMS depth profiles.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have