Preferential sputtering effects in depth profiling of multilayers with SIMS, XPS and AES

Abstract

Multilayer profiles are studied using the MRI model with extension to preferential sputtering. The results show a clear distinction with respect to the main contributions to the depth resolution, namely surface and interface roughness, and atomic mixing. For dominating roughness, the effect of preferential sputtering is more pronounced for the residual surface composition profile (detected by XPS and AES), but it is zero for the sputtered matter composition profile (detected by SIMS). Dominating mixing results in a strong effect of preferential sputtering on the shape of the profile. While in that case its effect on the XPS or AES depth profile is relatively moderate, its effect on the SIMS depth profile is surprisingly strong and appears to be in contradiction to textbook statements. Interface width, location and layer thickness are always affected by preferential sputtering in XPS and AES depth profiles, but SIMS depth profiles are only affected if the contribution of atomic mixing to depth resolution cannot be ignored. In conclusion, a new definition of multilayer resolution is proposed which is based on the normalized amplitude of the wave-like profiles. The successful application of MRI model extended for preferential sputtering is given for fitting an experimental AES depth profile of an Ag/Ni multilayer.