Abstract
The development of altered surface layers due to preferential sputtering can be modeled by an algorithm based on the diffusion theory of atomic mixing using a depth-dependent diffusion coefficient. Application of the model to typical SIMS depth profiles of buried layers indicates that the effects of atomic mixing and preferential sputtering can be separated by analysis of the shift and broadening of the measured peaks.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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